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Boltzmann transport equation based supply function for tunnelling from inversion layersVERCIK, A; FAIGON, A. N.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 533-535, issn 0959-8324, 3 p.Conference Paper
Electromagnetic tunneling of obliquely incident waves through a single-negative slab paired with a double-positive uniaxial slabCASTALDI, Giuseppe; GALDI, Vincenzo; ALU, Andrea et al.Journal of the Optical Society of America. B, Optical physics (Print). 2011, Vol 28, Num 10, pp 2362-2368, issn 0740-3224, 7 p.Article
Comment on Lifetime of metastable states in resonant tunneling structures. Authors' replyRODIN, Pavel; SCHOLL, Eckehard; TRETIAKOV, O. A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 4, pp 047301.1-047302.2, issn 1098-0121Article
Contact-dependent effects and tunneling currents in DNA moleculesMACIA, Enrique; TRIOZON, Francois; ROCHE, Stephan et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 11, pp 113106.1-113106.4, issn 1098-0121Article
Frustrated-total-internal-reflection-based thin-film color separatorPETROV, Nikolai I.Optics letters. 2007, Vol 32, Num 18, pp 2744-2746, issn 0146-9592, 3 p.Article
Resonant tunneling in frustrated total internal reflectionLONGHI, Stefano.Optics letters. 2005, Vol 30, Num 20, pp 2781-2783, issn 0146-9592, 3 p.Article
Plasmonic Zener tunneling in metal-dielectric waveguide arraysSHIU, Ruei-Cheng; LAN, Yung-Chiang.Optics letters. 2011, Vol 36, Num 21, pp 4179-4181, issn 0146-9592, 3 p.Article
Resonant tunneling effects on cavity-embedded metal film caused by surface-plasmon excitationLAN, Yung-Chiang; CHANG, Che-Jung; LEE, Peng-Hsiao et al.Optics letters. 2009, Vol 34, Num 1, pp 25-27, issn 0146-9592, 3 p.Article
Stochastic current switching in bistable resonant tunneling systemsTRETIAKOV, O. A; MATVEEV, K. A.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 165326.1-165326.20, issn 1098-0121Article
Low- and high-frequency noise from coherent two-level systemsSHNIRMAN, Alexander; SCHÖN, Gerd; MARTIN, Ivar et al.Physical review letters. 2005, Vol 94, Num 12, pp 127002.1-127002.4, issn 0031-9007Article
Confronting the Hartman effect with data from frustrated total internal reflection (FTIR)MARTINEZ, J. C.Laser physics. 2006, Vol 16, Num 7, pp 1123-1127, issn 1054-660X, 5 p.Article
Modeling the inelastic electron tunneling spectra of molecular wire junctionsTROISI, Alessandro; RATNER, Mark A.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 033408.1-033408.4, issn 1098-0121Article
Quantum filtering of electron emission from ultrasharp tipsPAN, Li-Hong; PERIDIER, Vallorie J; SULLIVAN, Thomas E et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 3, pp 035345.1-035345.12, issn 1098-0121Article
Spin transport in Ge/Si quantum dot arrayNENASHEV, A. V; ZINOVIEVA, A. F; DVURECHENSKII, A. V et al.SPIE proceedings series. 2004, pp 402-409, isbn 0-8194-5324-2, 8 p.Conference Paper
Quantum ratchets and quantum heat pumpsLINKE, H; HUMPHREY, T. E; LINDELOF, P. E et al.Applied physics. A, Materials science & processing (Print). 2002, Vol 75, Num 2, pp 237-246, issn 0947-8396Article
Tunneling into the normal state of Pr2-xCexCuO4DAGAN, Y; QAZILBASH, M. M; GREENE, R. L et al.Physical review letters. 2005, Vol 94, Num 18, pp 187003.1-187003.4, issn 0031-9007Article
Optical nonlinearity enhancement in heterostructures with thick metallic film and truncated photonic crystalsDU, Gui-Qiang; JIANG, Hai-Tao; WANG, Zhan-Shan et al.Optics letters. 2009, Vol 34, Num 5, pp 578-580, issn 0146-9592, 3 p.Article
Tunneling current from a metal electrode to many traps in an insulatorDOO SEOK JEONG; CHEOL SEONG HWANG.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 165327.1-165327.10, issn 1098-0121Article
Exactly solvable model for metal-insulator-metal stepped boundary tunnel junctionsSHU, Q. Q; JIANG, Y; MENG, S et al.Thin solid films. 2002, Vol 414, Num 1, pp 136-142, issn 0040-6090Article
The unacceptable variability in tunnel currents for proposed electronic device applicationsKELLY, Michael J.Semiconductor science and technology. 2006, Vol 21, Num 12, issn 0268-1242, L49-L51Article
Control of localization and suppression of tunneling by adiabatic passageSANGOUARD, N; GUERIN, S; AMNIAT-TALAB, M et al.Physical review letters. 2004, Vol 93, Num 22, pp 223602.1-223602.4, issn 0031-9007Article
Charging ratchets: Coulomb blockade and rectificationSTOPA, M.Applied physics. A, Materials science & processing (Print). 2002, Vol 75, Num 2, pp 247-252, issn 0947-8396Article
Electron tunneling in a non-magnetic heterostructure in presence of both Dresselhaus and Rashba spin-orbit termsLU, Jian-Duo.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 43, Num 1, pp 142-145, issn 1386-9477, 4 p.Article
Simulation of current-voltage characteristics of a MOS structure considering the tunnel transport of carriers in semiconductorVEXLER, M. I.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 1, pp 61-65, issn 0022-3727, 5 p.Article
Tunnelling system coupled to a harmonic oscillator : an analytical treatmentPAGANELLI, S; CIUCHI, S.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 32, pp 7669-7685, issn 0953-8984, 17 p.Article